Correlative analysis of conducting filament distribution at interfaces and bias-dependent noise sources in TiN/TiOx/Pt and Pt/TiOx/TiOy/Pt bipolar resistive switching frames

Abstract

We evaluated conducting filament distributions occurring at interfaces of TiN/TiOx/Pt and Pt/TiOx/TiOy/Pt bipolar resistive switching elements after electroforming by identifying bias-dependent low-frequency noise sources. The TiN/TiOx/Pt switching element showed higher noise features at low and high resistance states (LRS and HRS) than the Pt/TiOx/TiOy/P-t one. These behaviors are predominantly associated with the presence of different resistance distributions at LRS and HRS observed in both switching I-V curves. We propose a possible mechanism to explain the unique observed features by employing the role of the oxygen reservoir and conducting filament stability at interfaces of the two switching elements. (C) 2015 AIP Publishing LLC.