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dc.contributor.author전형탁-
dc.date.accessioned2016-08-29T04:39:20Z-
dc.date.available2016-08-29T04:39:20Z-
dc.date.issued2015-03-
dc.identifier.citationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v. 212, NO 3, Page. 674-679en_US
dc.identifier.issn1862-6319-
dc.identifier.issn1862-6300-
dc.identifier.urihttp://onlinelibrary.wiley.com/doi/10.1002/pssa.201431630/full-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/22807-
dc.description.abstractThis study examined the effect of a novel precursor on the growth behavior and structure of titanium dioxide (TiO2) thin films. TiO2 thin films were deposited by remote plasma atomic layer deposition (RPALD). Dimethylamin-cyclopentadienyl titanium, (CpN) Ti(NMe2)(2), was used as a Ti precursor and oxygen plasma was used as a reactant. (CpN) Ti(NMe2)(2) is a newly synthesized precursor for TiO2 deposition. Characteristics of TiO2 thin films deposited by (CpN) Ti(NMe2)(2) were compared with those of films deposited using a titanium tetrakis isopropoxide (TTIP) precursor. A wide processing window from 170 to 400 degrees C was observed, and the growth rate was around 0.44 angstrom/cycle at 200 degrees C. X-ray photoelectron spectroscopy (XPS) measurements revealed that nearly stoichiometric TiO2 films were deposited. The residual impurity concentrations inside the films were almost the same for (CpN) Ti(NMe2)(2) and TTIP. TiO2 films deposited on ruthenium showed a pure rutile phase at a low deposition temperature and low power pre-treatment. Therefore, this TiO2 film is very promising for metal-insulator-metal (MIM) capacitor dielectrics for dynamic random access memory (DRAM) applications. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.language.isoenen_US
dc.publisherWILEY-V C H VERLAG GMBHen_US
dc.subjectanataseen_US
dc.subjectDRAM capacitoren_US
dc.subjectprecursoren_US
dc.subjectremote plasma atomic layer depositionen_US
dc.titleGrowth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)(2) and oxygen remote plasmaen_US
dc.typeArticleen_US
dc.relation.no3-
dc.relation.volume212-
dc.identifier.doi10.1002/pssa.201431630-
dc.relation.page674-679-
dc.relation.journalPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE-
dc.contributor.googleauthorKang, Chunho-
dc.contributor.googleauthorJeon, Heeyoung-
dc.contributor.googleauthorJang, Woochool-
dc.contributor.googleauthorSong, Hyoseok-
dc.contributor.googleauthorKim, Honggi-
dc.contributor.googleauthorKim, Hyunjung-
dc.contributor.googleauthorJeon, Hyeongtag-
dc.relation.code2015003364-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidhjeon-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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