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dc.contributor.author전형탁-
dc.date.accessioned2016-08-25T00:47:58Z-
dc.date.available2016-08-25T00:47:58Z-
dc.date.issued2015-03-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 66, NO 5, Page. 821-827en_US
dc.identifier.issn0374-4884-
dc.identifier.issn1976-8524-
dc.identifier.urihttp://link.springer.com/article/10.3938/jkps.66.821-
dc.description.abstractIn this study, the characteristics of a thin nickel film deposited by using remote plasma atomic layer deposition (RPALD) on a p-type Si substrate and formation of nickel silicide by using rapid thermal annealing were determined. Bis(1,4-di-isopropyl-1,3-diazabutadienyl)nickel, (Ni( (i) Pr-DAD)(2)) was used as the Ni precursor and an ammonia plasma was used as a reactant. This was the first attempt to deposit a thin Ni film using by Ni( (i) Pr-DAD)(2) as a precursor for the ALD process. The Ni film that was deposited by using RPALD at a growth rate of around 2.2 /cycle at 250A degrees C showed a very low resistivity of 33 mu Omega A center dot cm with a total impurity concentration of around 10 at.%. The impurities in the thin film, carbon and nitrogen, were existed in the forms of C-C and C-N bonding states. The potential for removing impurities by comparing of experimental conditions, namely, the process temperature and pressure. The nitrogen impurity could be removed by using thermal desorption during each ALD cycle, and the carbon impurity could be reduced by optimizing the process pressure, which is directly related to the mean free path in the NH3 plasma. After Ni deposition, nickel silicide was formed by rapid thermal annealing (RTA) in a vacuum ambient for 1 minute. Nickel-silicide layers from obtained by used the ALD of Ni and obtained by used of the PVD Ni annealed at temperatures from 500 to 900A degrees C. NiSi obtained by used the ALD of Ni showed better thermal stability due to the contributions of small amounts of carbon and nitrogen in the as-deposited Ni thin film. Degradation of the silicide layer was effectively suppressed by using the ALD of ALD Ni.en_US
dc.description.sponsorshipHanyang University SK Hynix Semiconductoren_US
dc.language.isoenen_US
dc.publisherKOREAN PHYSICAL SOCen_US
dc.subjectAtomic layer depositionen_US
dc.subjectNickelen_US
dc.subjectRemote plasmaen_US
dc.subjectNi(Pr-i-DAD)(2)en_US
dc.subjectNickel silicideen_US
dc.titleCharacteristics of a nickel thin film and formation of nickel silicide by using remote plasma atomic layer deposition with Ni( (i) Pr-DAD)(2)en_US
dc.typeArticleen_US
dc.relation.no5-
dc.relation.volume66-
dc.identifier.doi10.3938/jkps.66.821-
dc.relation.page821-827-
dc.relation.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.googleauthorKim, Jinho-
dc.contributor.googleauthorJang, Woochool-
dc.contributor.googleauthorPark, Jingyu-
dc.contributor.googleauthorJeon, Heeyoung-
dc.contributor.googleauthorKim, Hyunjung-
dc.contributor.googleauthorYuh, Junhan-
dc.contributor.googleauthorJeon, Hyeongtag-
dc.relation.code2015000007-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidhjeon-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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