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Endurance improvement due to rapid thermal annealing (RTA) of a TaO (x) thin film in an oxygen ambient

Title
Endurance improvement due to rapid thermal annealing (RTA) of a TaO (x) thin film in an oxygen ambient
Author
전형탁
Keywords
RRAM; TaOx; Annealing
Issue Date
2015-03
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 66, NO 5, Page. 721-725
Abstract
As the device size is scaled down, the physical size limit is an issue that limits conventional chargebased memories. Thus, many academic studies have focused on investigating alternative non-volatile memories (NVMs). One NVM candidate is a resistive random access memory (RRAM), which has a simple structure and can be densified with a crossbar array structure. The resistive-switching characteristic of the Pt/annealed-TaO (x) /TiN structure was investigated in this research. Annealing at 300A degrees C in an oxygen ambient changed the phase of the TaO (x) layer from TaO2-y to Ta2O5-z . We investigated this change by using X-ray diffraction. The Ta2O5 thin layer, which was formed by annealing, produced a reliable conducting filament in the annealed-TaO (x) layer and improved the device characteristics.
URI
http://link.springer.com/article/10.3938/jkps.66.721http://hdl.handle.net/20.500.11754/22757
ISSN
0374-4884; 1976-8524
DOI
10.3938/jkps.66.721
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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