Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박종완 | - |
dc.date.accessioned | 2016-08-03T05:33:22Z | - |
dc.date.available | 2016-08-03T05:33:22Z | - |
dc.date.issued | 2015-02 | - |
dc.identifier.citation | JOURNAL OF ELECTRONIC MATERIALS, v. 44, NO 2, Page. 651-657 | en_US |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.issn | 1543-186X | - |
dc.identifier.uri | http://link.springer.com/article/10.1007/s11664-014-3554-y | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/22361 | - |
dc.description.abstract | The effect of an Al2O3/TiO2 stacked passivation layer on the performance of amorphous ZnSnO (a-ZTO) thin-film transistors (TFTs) was investigated by comparing field-effect mobility (mu (FE)) and subthreshold swing after passivation layer deposition. The values observed were 4.7 cm(2)/Vs and 0.64 V/decade, respectively, for uncoated TFTs and 4.6 cm(2)/Vs and 0.62 V/decade for passivated TFTs. In addition, excellent water vapor transmission was observed for electron beam-irradiated Al2O3/TiO2-passivated poly(ether sulfone) substrates in a humidity test, because the Al2O3/TiO2 passivation layer can enhance the interface properties between Al2O3 and TiO2. To investigate the origin of this enhancement, we performed x-ray photoelectron spectroscopy of both unpassivated and Al2O3/TiO2-passivated TFTs with a-ZTO back-channel layers after Ar annealing. | en_US |
dc.description.sponsorship | National Research Foundation of Korea (NRF) - Ministry of Education | en_US |
dc.language.iso | en | en_US |
dc.publisher | SPRINGER | en_US |
dc.subject | Amorphous oxide semiconductor | en_US |
dc.subject | zinc-tin-oxide (ZTO) | en_US |
dc.subject | Al2O3/TiO2 | en_US |
dc.subject | passivation layer | en_US |
dc.subject | electron beam irradiation | en_US |
dc.title | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 44 | - |
dc.identifier.doi | 10.1007/s11664-014-3554-y | - |
dc.relation.page | 651-657 | - |
dc.relation.journal | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.contributor.googleauthor | Han, Dong-Suk | - |
dc.contributor.googleauthor | Park, Jae-Hyung | - |
dc.contributor.googleauthor | Kang, Min-Soo | - |
dc.contributor.googleauthor | Shin, So-Ra | - |
dc.contributor.googleauthor | Jung, Yeon-Jae | - |
dc.contributor.googleauthor | Choi, Duck-Kyun | - |
dc.contributor.googleauthor | Park, Jong-Wan | - |
dc.relation.code | 2015001921 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jwpark | - |
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