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dc.contributor.author박종완-
dc.date.accessioned2016-08-03T05:33:22Z-
dc.date.available2016-08-03T05:33:22Z-
dc.date.issued2015-02-
dc.identifier.citationJOURNAL OF ELECTRONIC MATERIALS, v. 44, NO 2, Page. 651-657en_US
dc.identifier.issn0361-5235-
dc.identifier.issn1543-186X-
dc.identifier.urihttp://link.springer.com/article/10.1007/s11664-014-3554-y-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/22361-
dc.description.abstractThe effect of an Al2O3/TiO2 stacked passivation layer on the performance of amorphous ZnSnO (a-ZTO) thin-film transistors (TFTs) was investigated by comparing field-effect mobility (mu (FE)) and subthreshold swing after passivation layer deposition. The values observed were 4.7 cm(2)/Vs and 0.64 V/decade, respectively, for uncoated TFTs and 4.6 cm(2)/Vs and 0.62 V/decade for passivated TFTs. In addition, excellent water vapor transmission was observed for electron beam-irradiated Al2O3/TiO2-passivated poly(ether sulfone) substrates in a humidity test, because the Al2O3/TiO2 passivation layer can enhance the interface properties between Al2O3 and TiO2. To investigate the origin of this enhancement, we performed x-ray photoelectron spectroscopy of both unpassivated and Al2O3/TiO2-passivated TFTs with a-ZTO back-channel layers after Ar annealing.en_US
dc.description.sponsorshipNational Research Foundation of Korea (NRF) - Ministry of Educationen_US
dc.language.isoenen_US
dc.publisherSPRINGERen_US
dc.subjectAmorphous oxide semiconductoren_US
dc.subjectzinc-tin-oxide (ZTO)en_US
dc.subjectAl2O3/TiO2en_US
dc.subjectpassivation layeren_US
dc.subjectelectron beam irradiationen_US
dc.titleEffect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistorsen_US
dc.typeArticleen_US
dc.relation.no2-
dc.relation.volume44-
dc.identifier.doi10.1007/s11664-014-3554-y-
dc.relation.page651-657-
dc.relation.journalJOURNAL OF ELECTRONIC MATERIALS-
dc.contributor.googleauthorHan, Dong-Suk-
dc.contributor.googleauthorPark, Jae-Hyung-
dc.contributor.googleauthorKang, Min-Soo-
dc.contributor.googleauthorShin, So-Ra-
dc.contributor.googleauthorJung, Yeon-Jae-
dc.contributor.googleauthorChoi, Duck-Kyun-
dc.contributor.googleauthorPark, Jong-Wan-
dc.relation.code2015001921-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjwpark-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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