Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2016-06-08T05:43:20Z | - |
dc.date.available | 2016-06-08T05:43:20Z | - |
dc.date.issued | 2015-01 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v. 54, NO 2, Page. 25501-25501 | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/21586 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.7567/JJAP.54.025501/meta;jsessionid=0BB7CB2C5678CAD9F37FCB8C58143F48.ip-10-40-1-105 | - |
dc.description.abstract | Ni films were deposited by metal organic chemical vapor deposition (MOCVD) using a novel Ni precursor, bis(1,4-di-isopropyl-1,3-diazabutadienyl)nickel [Ni(Pr-i-DAD)(2)], and NH3 gas. To optimize process conditions, the deposition temperature and reactant partial pressure were varied from 200 to 350 degrees C and from 0.2 to 0.99 Torr, respectively. Ni films deposited at 300 degrees C with a reactant pressure of 0.8 Torr exhibited excellent quality, and had a low carbon impurity concentration of around 4%. In addition, a sacrificial Ti capping layer was deposited by an in situ e-beam evaporator on top of the Ni films to enhance the thermal stability of the subsequently formed NiSi films. Both the Ti-capped and uncapped Ni films were annealed by a two-step method, with a first annealing conducted at 500 degrees C, followed by wet etching and then a second annealing carried out from 500 to 900 degrees C. The Ti capping layer did not affect the silicidation kinetic process, but by acting-as an oxygen scavenger, it did enhance the morphological stability of the NiSi films and thus improve their electrical properties. (C) 2015 The Japan Society of Applied Physics | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.title | Effect of a Ti capping layer on thermal stability of NiSi formed from Ni thin films deposited by metal organic chemical vapor deposition using a Ni(Pr-i-DAD)(2) precursor | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 54 | - |
dc.identifier.doi | 10.7567/JJAP.54.025501 | - |
dc.relation.page | 25501-25501 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Park, Jingyu | - |
dc.contributor.googleauthor | Jeon, Heeyoung | - |
dc.contributor.googleauthor | Kim, Hyunjung | - |
dc.contributor.googleauthor | Jang, Woochool | - |
dc.contributor.googleauthor | Kang, Chunho | - |
dc.contributor.googleauthor | Yuh, Junhan | - |
dc.contributor.googleauthor | Jeon, Hyeongtag | - |
dc.relation.code | 2015000564 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE & ENGINEERING | - |
dc.identifier.pid | hjeon | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.