Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2016-06-07T08:12:45Z | - |
dc.date.available | 2016-06-07T08:12:45Z | - |
dc.date.issued | 2015-01 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v. 36, NO 1, Page. 38-40 | en_US |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/21542 | - |
dc.identifier.uri | http://ieeexplore.ieee.org/document/6939617/?reload=true | - |
dc.description.abstract | High-performance thin-film transistors (TFTs) based on ZnON channels were fabricated using a de reactive sputtering method. To improve the photoinduced bias stability, a postannealing process was carried out at a low ambient pressure (similar to 100 mTorr, air ambient) at 250 degrees C for various annealing times (1-5 h). The transfer characteristics of the postannealed ZnON TFTs exhibited an improved subthreshold swing ranging from 0.60 to 0.42 V/decade. Other transport properties remained similar including a high mobility (mu(sat)) of ˃50 cm(2)Ns, a threshold voltage (Vth) of 2.5 V, and an ON OFF drain current ratio of ˃10(8). In addition, photoinduced bias reliability under a gate bias stress (V-G = 20 V) was significantly improved from -10.88 V (1 h) to -2.28 V (5 h). These results can be explained by the enhancement of bonding properties between Zn metal and two different anions (O, N) as stable N Zn O states. | en_US |
dc.description.sponsorship | This work was supported in part by the National Research Foundation of Korea under Grant 2012011730 and in part by the Ministry of Science, ICT and Future Planning under Grant 10041416. The review of this letter was arranged by Editor A. Chin. (Corresponding author: Hyun-Suk Kim and Jin-Seong Park.) | - |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | reactive sputtering | en_US |
dc.subject | High mobility | en_US |
dc.subject | illumination | en_US |
dc.subject | reliability | en_US |
dc.subject | transistors | en_US |
dc.subject | zinc oxynitride | en_US |
dc.title | Highly Stable ZnON Thin-Film Transistors With High Field-Effect Mobility Exceeding 50 cm(2)/Vs | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 36 | - |
dc.identifier.doi | 10.1109/LED.2014.2365614 | - |
dc.relation.page | 38-40 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.googleauthor | Ok, Kyung-Chul | - |
dc.contributor.googleauthor | Jeong, Hyun-Jun | - |
dc.contributor.googleauthor | Kim, Hyun-Suk | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2015000488 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE & ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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