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dc.contributor.author박진섭-
dc.date.accessioned2016-05-27T01:04:37Z-
dc.date.available2016-05-27T01:04:37Z-
dc.date.issued2015-01-
dc.identifier.citationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 29, Page. 380-385en_US
dc.identifier.issn1369-8001-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/21384-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S1369800114004405-
dc.description.abstractWe report the enhancement of light extraction efficiency (LEE) and electrical performance in GaN-based green light-emitting diodes (LEDs) using ZnO nanorods formed on the etched surface of p-GaN. Green LEDs with hybrid ZnO nanorod structures grown on the hexagonally etched topmost layer of the LEDs, show an improvement in electroluminescence intensity that is 3.5 times higher than LEDs without any other surface treatments. The improvement in LEE in LEDs with nanohybrid structures was confirmed by finite-difference time-domain simulation analysis. Besides LEE enhancement, the surface etching effects on the reduction of leakage current of fabricated LEDs were also investigated. (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.description.sponsorshipThis research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (NRF-2012R1A1A1041930).-
dc.language.isoenen_US
dc.publisherELSEVIER SCI LTDen_US
dc.subjectLight-emitting diodeen_US
dc.subjectEtch piten_US
dc.subjectZnOen_US
dc.subjectLight extractionen_US
dc.titleImproved light extraction efficiency and leakage characteristics in light-emitting diodes by nanorod arrays formed on hexagonal pitsen_US
dc.typeArticleen_US
dc.relation.volume29-
dc.identifier.doi10.1016/j.mssp.2014.08.005-
dc.relation.page380-385-
dc.relation.journalMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING-
dc.contributor.googleauthorSon, Taejoon-
dc.contributor.googleauthorShin, Dong Su-
dc.contributor.googleauthorMageshwari, K-
dc.contributor.googleauthorKim, Kyoung-Kook-
dc.contributor.googleauthorPark, Jinsub-
dc.relation.code2015001020-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidjinsubpark-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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