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dc.contributor.author정재경-
dc.date.accessioned2016-05-19T08:35:26Z-
dc.date.available2016-05-19T08:35:26Z-
dc.date.issued2015-01-
dc.identifier.citationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, Volume 30, Number 2 , Page. 24002-24017en_US
dc.identifier.issn0268-1242-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/21248-
dc.identifier.urihttp://iopscience.iop.org/article/10.1088/0268-1242/30/2/024002/meta;jsessionid=DF49360B646F5B612786AC8813C4D6C4.c3.iopscience.cld.iop.org-
dc.description.abstractThis review gives an overview of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding metal oxide TFTs in terms of fundamental electron structure, device process and reliability have been published. In particular, the required field-effect mobility of TMO TFTs has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel displays, such as liquid crystal displays, organic light emitting diodes and flexible displays. In this regard, the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems. In addition, the new strategic approaches including zinc oxynitride materials, double channel structures, and composite structures have been proposed recently, and were not covered in detail in previous review papers. Special attention is given to the advanced device architecture of TMO TFTs, such as back-channel-etch and self-aligned coplanar structure, which is a key technology because of their advantages including low cost fabrication, high driving speed and unwanted visual artifact-free high quality imaging. The integration process and related issues, such as etching, post treatment, low ohmic contact and Cu interconnection, required for realizing these advanced architectures are also discussed.en_US
dc.description.sponsorshipThis study was supported by a Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST) (No. 2012R1A2A2A02005854), the industrial strategic technology development program (10041041) funded by MKE/KEIT.-
dc.language.isoenen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.subjectfield-effect transistorsen_US
dc.subjecthigh performanceen_US
dc.subjectmetal oxideen_US
dc.titleRecent progress in high performance and reliable n-type transition metal oxide-based thin film transistorsen_US
dc.typeArticleen_US
dc.relation.volume30-
dc.identifier.doi10.1088/0268-1242/30/2/024002-
dc.relation.page24002-24017-
dc.relation.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGY-
dc.contributor.googleauthorKwon, Jang Yeon-
dc.contributor.googleauthorJeong, Kyeong-
dc.relation.code2015001479-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidjkjeong1-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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