Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김영도 | - |
dc.date.accessioned | 2016-05-11T01:38:06Z | - |
dc.date.available | 2016-05-11T01:38:06Z | - |
dc.date.issued | 2015-01 | - |
dc.identifier.citation | 한국재료학회지, v. 25, NO 1, Page. 16-20 | - |
dc.identifier.issn | 1225-0562 | - |
dc.identifier.issn | 2287-7258 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/21155 | - |
dc.identifier.uri | http://journal.mrs-k.or.kr/journal/article.php?code=21808 | - |
dc.description.abstract | In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of 120 μm, 130 μm, 140 μm. Formation of the Al doped p+ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped p+ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of 5.34 mg/cm2 of Al paste, wafer bowing in a thickness of 140 μm reached a maximum of 2.9 mm and wafer bowing in a thickness of 120 μm reached a maximum of 4 mm. The study’s results suggest that when considering uniformity and thickness of an Al doped p+ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is 4.72 mg/cm2 in a wafer with a thickness of 120 μm. | - |
dc.description.sponsorship | 본 연구는 2014년도 산업통상자원부의 재원으로 한국 에너지기술평가원(KETEP)의 지원을 받아 수행한 연구 과 제입니다(No.2012T100201712). | - |
dc.language.iso | en | - |
dc.publisher | 한국재료학회 | - |
dc.subject | solar cell | - |
dc.subject | n-type | - |
dc.subject | thin wafer | - |
dc.subject | bowing | - |
dc.subject | Al doped p+ layer. | - |
dc.title | N타입 결정질 실리콘 웨이퍼 두께 및 알루미늄 페이스트 도포량 변화에따른 Bowing 및 Al doped p+ layer 형성 분석 | - |
dc.title.alternative | Analysis on Bowing and Formation of Al Doped P+ Layer by Changes of Thickness of N-type Wafer and Amount of Al Paste | - |
dc.type | Article | - |
dc.relation.no | 1 | - |
dc.relation.volume | 25 | - |
dc.identifier.doi | 10.3740/MRSK.2015.25.1.16 | - |
dc.relation.page | 16-20 | - |
dc.relation.journal | 한국재료학회지 | - |
dc.contributor.googleauthor | 박태준 | - |
dc.contributor.googleauthor | 변종민 | - |
dc.contributor.googleauthor | 김영도 | - |
dc.contributor.googleauthor | Park, Tae Jun | - |
dc.contributor.googleauthor | Byun, Jong Min | - |
dc.contributor.googleauthor | Kim, Young Do | - |
dc.relation.code | 2015040900 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE & ENGINEERING | - |
dc.identifier.pid | ydkim1 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.