Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박태주 | - |
dc.date.accessioned | 2024-06-18T06:08:39Z | - |
dc.date.available | 2024-06-18T06:08:39Z | - |
dc.date.issued | 2023-11-01 | - |
dc.identifier.citation | APPLIED SURFACE SCIENCE, v. 636, article no 157824, page. 1-9 | en_US |
dc.identifier.issn | 0169-4332 | en_US |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0169433223015039 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/190810 | - |
dc.description.abstract | The epitaxial growth of NbN thin film was accomplished via atomic layer deposition (ALD) for the first time using NbCl5 and NH3 as the Nb precursor and nitrogen source at a deposition temperature of 450 celcius. The cubic NbN thin film was grown epitaxially on a cubic MgO crystal through the coherent lattice matching between NbN and MgO with a small lattice mismatch (similar to 2.8%). A high concentration of Cl impurity of 4-5% remained in NbN thin films grown on a SiO2 substrate using ALD. However, the Cl impurity concentration decreased to similar to 2% in the epitaxially grown NbN thin films, which facilitated the epitaxial growth of NbN thin films on the MgO substrate. The origin was attributed to a residual strain at the NbN/MgO interface, which induced a bond length change in Nb-N-Cl. The bond length change may promote Cl desorption during NbN ALD because an in-plane compressive strain in the NbN film and an in-plane tensile strain in the MgO surface were observed. Finally, the epitaxially grown NbN thin film exhibited a 50% lower resistivity than that grown with a polycrystalline phase based on the enhanced carrier mobility owing to the improved crystallinity of epitaxial NbN thin films. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT (RS-2023- 00258557). This work was also supported by the Technology Innovation Program (RS-2023-00237002, RS-2023-00234833) funded by the Ministry of Trade, Industry & Energy(MOTIE, Korea). | en_US |
dc.language | en_US | en_US |
dc.publisher | ELSEVIER | en_US |
dc.relation.ispartofseries | v. 636, article no 157824;1-9 | - |
dc.subject | Metal thin film | en_US |
dc.subject | NbN | en_US |
dc.subject | Epitaxy | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.subject | Lattice matching | en_US |
dc.title | Epitaxial growth of NbN thin films for electrodes using atomic layer deposition | en_US |
dc.type | Article | en_US |
dc.relation.volume | 636 | - |
dc.identifier.doi | https://doi.org/10.1016/j.apsusc.2023.157824 | en_US |
dc.relation.page | 157824-157832 | - |
dc.relation.journal | APPLIED SURFACE SCIENCE | - |
dc.contributor.googleauthor | Jang, Seo Young | - |
dc.contributor.googleauthor | Lee, Hye Min | - |
dc.contributor.googleauthor | Sung, Ju Young | - |
dc.contributor.googleauthor | Kim, Se Eun | - |
dc.contributor.googleauthor | Jeon, Jae Deock | - |
dc.contributor.googleauthor | Yun, Yewon | - |
dc.contributor.googleauthor | Moon, Sang Mo | - |
dc.contributor.googleauthor | Yoo, Joung Eun | - |
dc.contributor.googleauthor | Choi, Ji Hyeon | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.relation.code | 2023034399 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | tjp | - |
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