Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 진지동 | - |
dc.date.accessioned | 2024-05-03T01:01:01Z | - |
dc.date.available | 2024-05-03T01:01:01Z | - |
dc.date.issued | 2024-04-23 | - |
dc.identifier.citation | ACS APPLIED ELECTRONIC MATERIALS, v. 6, NO 4, Page. 2442-2448 | en_US |
dc.identifier.issn | 2637-6113 | en_US |
dc.identifier.uri | https://information.hanyang.ac.kr/#/eds/detail?an=001201298800001&dbId=edswsc | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/190141 | - |
dc.description.abstract | In this work, the fabrication and characterization of high performance indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs) with hexamethyldisilazane (HMDS) passivation are presented. The incorporation of HMDS passivation significantly enhances the electrical performance and bias stress stability of ITZO TFTs compared with those without HMDS passivation. X-ray photoelectron spectroscopy measurements reveal that ITZO TFTs with HMDS passivation offer distinct advantages over those without HMDS passivation, including an increased concentration of metal oxide and a reduced concentration of oxygen vacancies and hydroxyl groups in the active channel layer. As a result, the ITZO TFTs with HMDS passivation exhibit a saturation mobility of 26.15 +/- 1.14 cm(2)˂middle dot˃V-1˂middle dot˃s(-1), a subthreshold swing of 0.26 +/- 0.04 V˂middle dot˃dec(-1), an on/off current ratio of 9 x 10(8), and excellent operational bias stress stability when compared to ITZO TFTs without HMDS passivation. | en_US |
dc.description.sponsorship | This research was supported in part by the Technology Innovation Program through the Korea Evaluation Institute of Industrial Technology (KEIT), funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under grant 20015909; in part by the Korea Basic Science Institute (National research Facilities and Equipment Center), grant funded by the Ministry of Education, under grant 2023R1A6C103A035 and grant 2021R1A6C101A405; in part by the National Research Foundation of Korea (NRF) grant founded by the Korea government (MSIT) under grant NRF-2023R1A2C1007034; in part by the KIST institutional project under grant 2E32942; and in part by the research fund of Hanyang University under grant HY-2021-2716. | en_US |
dc.language | en_US | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.relation.ispartofseries | v. 6, NO 4;2442-2448 | - |
dc.subject | indium tin zinc oxide (ITZO) | en_US |
dc.subject | thin-film transistors(TFTs) | en_US |
dc.subject | hexamethyldisilazane (HMDS) passivation | en_US |
dc.subject | bias stress stability | en_US |
dc.title | High Performance Indium-Tin-Zinc-Oxide Thin-Film Transistor with Hexamethyldisilazane Passivation | en_US |
dc.type | Article | en_US |
dc.relation.no | 4 | - |
dc.relation.volume | 6 | - |
dc.identifier.doi | 10.1021/acsaelm.4c00100 | en_US |
dc.relation.page | 2442-2448 | - |
dc.relation.journal | ACS APPLIED ELECTRONIC MATERIALS | - |
dc.contributor.googleauthor | Sun, Xinkai | - |
dc.contributor.googleauthor | Han, Jae-Hoon | - |
dc.contributor.googleauthor | Xiao, Zhenyuan | - |
dc.contributor.googleauthor | Chen, Simin | - |
dc.contributor.googleauthor | Jin, Taewon | - |
dc.contributor.googleauthor | Noh, Taehyeon | - |
dc.contributor.googleauthor | Park, Seoungmin | - |
dc.contributor.googleauthor | Kim, Jaekyun | - |
dc.contributor.googleauthor | Jin, Jidong | - |
dc.contributor.googleauthor | Kim, Younghyun | - |
dc.relation.code | 2024001472 | - |
dc.sector.campus | E | - |
dc.sector.daehak | INDUSTRY-UNIVERSITY COOPERATION FOUNDATION(ERICA)[E] | - |
dc.sector.department | RESEARCH INSTITUTE | - |
dc.identifier.pid | jinjidong | - |
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