Broadband Spectral High-detectivity Metal Oxide Semiconductor-based Hybrid Phototransistor via Dry Transfer of Composite Organic Films Gi-Sang Choi

Abstract

Broadband Spectral High-detectivity Metal Oxide Semiconductor-based Hybrid Phototransistor via Dry Transfer of Composite Organic Films Gi-Sang Choi Dept. of Photonics and Nanoelectronics The Graduate School Hanyang University Hybrid metal oxide-based phototransistor with broadband spectral sensitivity/detectivity and fast response time was developed with intense pulse light (IPL)-based thermal dry transfer of alpha-sexithiophene (α-6T) and boron- subphthalocyanine (SubPc) organic composite thin films. This dry transfer process of organic films is inherently free from solvent-related processes to the metal oxide transistors and also suppresses the degradation of off-current. It was found that this combination of organic composite films of α-6T/SubPc on the InSnZnO metal oxide thin film transistor can achieve effective photoelectronic conversion capabilities under red (635 nm), green (520 nm), and violet (406 nm) illumination with detectivity of 1.7x1012, 6.5x1013, 1.8x1013 Jones and responsivity of 517, 1182, 1920 A/W respectively. Therefore, our approach of dry- transferred organic-inorganic phototransistor can be a promising potential to be used in future image sensor applications.