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dc.contributor.author์ดํ™”์„ฑ-
dc.date.accessioned2024-02-01T04:27:21Z-
dc.date.available2024-02-01T04:27:21Z-
dc.date.issued2024-01-
dc.identifier.citationADVANCED FUNCTIONAL MATERIALSen_US
dc.identifier.issn1616-301Xen_US
dc.identifier.issn1616-3028en_US
dc.identifier.urihttps://onlinelibrary.wiley.com/doi/full/10.1002/adfm.202312232en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/188135-
dc.description.abstractFacile charge transfer between source/drain (S/D) electrodes and organic semiconductor (OSC) channel is crucial for high-mobility organic field-effect transistors (OFETs). Herein, a novel OFET geometry is developed by modifying a top-contact bottom-gate device structure, termed a buried-contact OFET, enabling close proximity between the S/D-OSC interface and conducting channel, consequently decreasing the access contact resistance (RC,acc) and overall contact resistance (RC). Conventional post-thermal annealing is combined with a burying pressure (pressure-thermal annealing (PTA)). The synergistic effect of thermal and pressure annealings leads to the softened OSC layer enabling metal electrodes to bury inward by applied pressure. This process induces structural transitions from a top-contact to buried-contact configuration, as verified by atomic force microscopy and finite element simulations. Transfer line method and 4-probe measurements revealed that PTA reduces the contact by 1/3 (65 k๐›€ cm) and the source-to-drain voltage waste due to charge injection from 52% to 31%. Consequently, the field-effect mobility is four times higher than that of a conventional thermally annealed top-contact OFET. The density of deep traps (Ntr) is mainly distributed in the OSC bulk responsible for charge injection. Remarkably, the Ntr decreased 30-fold using PTA, resulting in a shallow sub-threshold region and a threshold voltage close to zero.en_US
dc.description.sponsorshipT.H. and J.S. contributed equally to this work. This work was sup-ported by the following grants: Framework of international coopera-tion program managed by the National Research Foundation of Ko-rea (NRF) (2021K1A3A1A20003483), Basic Science Research Programthrough NRF funded by Ministry of Education (2022R1F1A1074088 and2020R1C1C1012690), National R&D Program through NRF funded byMinistry of Science and ICT (MSIT) (2022M3C1C3095083), and NRF grantfunded by MSIT (RS-2023-00210865).en_US
dc.languageen_USen_US
dc.publisherWiley-VCH GmbHen_US
dc.relation.ispartofseries;2312232-2312240-
dc.subjectburied-contact OFETen_US
dc.subjectcontact resistanceen_US
dc.subjectdeep trapen_US
dc.subjectfour-probe measure-menten_US
dc.subjecttop-contact OFETen_US
dc.subjecttransfer line methoden_US
dc.titleBuried-Contact Organic Field-Effect Transistor: The Way of Alleviating Drawbacks from Interfacial Charge Transferen_US
dc.typeArticleen_US
dc.identifier.doihttps://doi.org/10.1002/adfm.202312232en_US
dc.relation.page2312232-2312240-
dc.relation.journalADVANCED FUNCTIONAL MATERIALS-
dc.contributor.googleauthorHwang, Taehoon-
dc.contributor.googleauthorSeo, Jungyoon-
dc.contributor.googleauthorTsogbayar, Dashdendev-
dc.contributor.googleauthorKo, Eun-
dc.contributor.googleauthorPark, Jisu-
dc.contributor.googleauthorJeong, Yujeong-
dc.contributor.googleauthorHan, Songyeon-
dc.contributor.googleauthorKim, Hongdeok-
dc.contributor.googleauthorCho, Joonmyung-
dc.contributor.googleauthorLee, Hwa Sung-
dc.relation.code2024003545-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING-
dc.identifier.pidhslee78-


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