Thin-film image sensors with a pinned photodiode structure
- Title
- Thin-film image sensors with a pinned photodiode structure
- Author
- 이지원
- Issue Date
- 2023-08
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- Nature Electronics, v. 6, NO. 8, Page. 590.0-598.0
- Abstract
- Organic semiconductor and colloidal quantum-dot-based thin-film image sensors show reduced noise, dark current and image lag when a pinned photodiode pixel structure, similar to those in silicon-based image sensors, is used. Image sensors made using silicon complementary metal-oxide-semiconductor technology can be found in numerous electronic devices and typically rely on pinned photodiode structures. Photodiodes based on thin films can have a high absorption coefficient and a wider wavelength range than silicon devices. However, their use in image sensors has been limited by high kTC noise, dark current and image lag. Here we show that thin-film-based image sensors with a pinned photodiode structure can have comparable noise performance to a silicon pinned photodiode pixel. We integrate either a visible-to-near-infrared organic photodiode or a short-wave infrared colloidal quantum dot photodiode with a thin-film transistor and silicon readout circuitry. The thin-film pinned photodiode structures exhibit low kTC noise, suppressed dark current, high full-well capacity and high electron-to-voltage conversion gain, as well as preserving the benefits of the thin-film materials. An image sensor based on the organic absorber has a quantum efficiency of 54% at 940 nm and read noise of 6.1e(-).
- URI
- https://www.nature.com/articles/s41928-023-01016-9https://repository.hanyang.ac.kr/handle/20.500.11754/187837
- ISSN
- 2520-1131
- DOI
- 10.1038/s41928-023-01016-9
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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