MTJ 이온빔 Etching에서 메탄올 을 이용한 Ta Residue Clean 에 관한 연구

Abstract

As the need to process and store a huge amount of information has emerged in the recent information society, the importance of information has emerged. Therefore, high speed, low power, non-volatility, and density are required, andnew R&D is being conducted. Therefore, STT-MRAM was studied. In addition, there are CCP RIE Type and ICP RIE Type Wafer Etching methods. After etching, product by-products were attached to the redeposited surface of the sidewall, and many problems were found, so the etching method using IBE (Ion Beam) was used. A lot of research is needed on the problems found in ion beam etching. Ion beam etching can be etched by the slope of the wafer, but shadows and re deposition do not occur easily because the ion beam etching is not performed on the sidewall portion where the incident angle of the ion beam is not sufficient. Also, for the MTJ Short Issue, we will define methanol to remove it.