Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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Investigation of light extraction efficiency in AlGaN deep ultraviolet LEDs using FDTD simulations
- Title
- Investigation of light extraction efficiency in AlGaN deep ultraviolet LEDs using FDTD simulations
- Author
- 심종인
- Issue Date
- 2013-08
- Publisher
- IEEE
- Citation
- 13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013, article no. 6633151, Page. 115-116
- Abstract
- Light extraction efficiency (LEE) in AlGaN deep ultraviolet (UV) light-emitting diodes (LEDs) is investigated using three-dimensional finite-difference time-domain simulations. For flip-chip LED structures, LEE is obtained to be <10% due to strong UV light absorption in the p-GaN layer. In addition, LEE of transverse-magnetic (TM) modes is found to be more than ten times smaller than that of transverse-electric (TE) modes, which explains the decreasing behavior of external quantum efficiency of UV LEDs with decreasing wavelengths. © 2013 IEEE.
- URI
- https://ieeexplore.ieee.org/document/6633151https://repository.hanyang.ac.kr/handle/20.500.11754/185130
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
- Files in This Item:
- 8833_심종인.pdfDownload
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