A novel photovoltaic nanodevice based on the co-integration of silicon micro and nanowires prepared by electroless etching with conformal plasma doping
- Title
- A novel photovoltaic nanodevice based on the co-integration of silicon micro and nanowires prepared by electroless etching with conformal plasma doping
- Author
- 이정호
- Keywords
- Plasma doping; Conversion efficiency; In-between; P-n junction; Wire arrays; Micro wire; Semiconductor junctions; Wire; Dense arrays; Wet etching; Cointegration; Anti-reflection; Integrated nanostructures; Silicon; Electroless; Nanowires; Nano device; Ele
- Issue Date
- 2009-00
- Publisher
- IEEE
- Citation
- Technical Digest - International Electron Devices Meeting, IEDM, article no. 5424298, Page. 22.7.1-22.7.4
- Abstract
- Periodically patterned co-integration of silicon microwires (MWs) and nanowires (NWs) were applied for a novel photovoltaic (PV) nanodevice. The optical improvement due to antireflection enhancement with a graded-refractive-index (GRI) effect (see Fig. 1) was observed by employing the tapered NWs. Si MWs that formed a radial p-n junction were located in between the dense array of Si NWs. These wire arrays were cost-effectively defined by metal-assisted electroless wet etching. The co-integrated nanostructure of Si NWs and MWs demonstrated a high short circuit current (Jsc) and cell conversion efficiency (CE) compared to a sole array of Si NWs or MWs. Highest values of Jsc and CE at 1.5AM illumination were recorded as 24.89 mA/cm2 and 8.45%, respectively, which have been champion data reported to date in wire based PV cells using a radial p-n junction. © 2009 IEEE.
- URI
- https://ieeexplore.ieee.org/document/5424298https://repository.hanyang.ac.kr/handle/20.500.11754/181419
- ISSN
- 0163-1918;2156-017X
- DOI
- 10.1109/IEDM.2009.5424298
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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