대면적 이온겔 건식 전사 방식을 이용한 MoS2/ITZO 이종 구조 기반 포토트랜지스터의 저전압 구동

Abstract

Molybdenum disulfide (MoS2) has attracted much attention for visible light detection applications due to its excellent absorbance and tunable bandgap of 1.3~1.9 eV. However, the performance of the MoS2-based photosensor devices needs to be continuously improved from the perspective of ease of fabrication and low power consumption, as well as the sensing performances such as sensitivity and responsivity. In this study, we propose an ion gel-assisted dry transfer method to produce the large-area MoS2/ion gel free-standing films and laminate them on high-performance indium-tin-zinc-oxide (ITZO) thin film for low-voltage sensor operation. Consequently, our ion gel-gated MoS2/ITZO phototransistor exhibited the electron mobility of 4.12 cm2/Vs with 4.9x105 Ion/Ioff ratio while achieving the photoresponsivity of 0.85A/W at 635nm, 1.93A/W at 520nm with low bias regime.