Full metadata record
DC Field | Value | Language |
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dc.contributor.author | 오새룬터 | - |
dc.date.accessioned | 2023-01-04T02:25:33Z | - |
dc.date.available | 2023-01-04T02:25:33Z | - |
dc.date.issued | 2019-07 | - |
dc.identifier.citation | AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, article no. 8830599, Page. 1-4 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8830599/ | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/178763 | - |
dc.description.abstract | Channel geometry effects on the gate bias-stress instabilities of the flexible amorphous InGaZnO (IGZO) thin film transistors (TFTs) fabricated on ultra-thin polyimide films with a thickness of 1.2 μm were investigated. The flexible IGZO TFT exhibited a saturation mobility of 13.2 cm2/Vs and a subthreshold swing of 0.19 V/dec. Excellent positive bias stress (PBS) stabilities could be successfully obtained at a gate bias of 20 V even under the mechanically-strained conditions. Alternatively, at a higher bias stress of 35 V, the turn-on voltage shifts at a bending radius of 1 mm during the PBS tests were estimated for the TFTs with channel widths of 20 μm and 160 μm to be 0.7 and 4.9 V, respectively. Channel geometry-dependent PBS instability was suggested to originate from the stress concentration along the bending axis, which was verified by the evaluation results measured at various conditions and the TCAD simulations. © 2019 FTFMD. | - |
dc.language | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Analysis on Mechanical-Strain Induced Bias-Stress Instabilities for the Flexible InGaZnO Thin Film Transistors with Different Channel Geometries | - |
dc.type | Article | - |
dc.identifier.doi | 10.23919/AM-FPD.2019.8830599 | - |
dc.relation.page | 1-4 | - |
dc.relation.journal | AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings | - |
dc.contributor.googleauthor | Jang, Hye won | - |
dc.contributor.googleauthor | Kim, Ki hwan | - |
dc.contributor.googleauthor | Oh, Saeroonter | - |
dc.contributor.googleauthor | Yoon, Sung min | - |
dc.sector.campus | E | - |
dc.sector.daehak | 공학대학 | - |
dc.sector.department | 전자공학부 | - |
dc.identifier.pid | sroonter | - |
dc.identifier.article | 8830599 | - |
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