Memory Characteristics of Capacitors with Poly-GaP Floating Gates
- Title
- Memory Characteristics of Capacitors with Poly-GaP Floating Gates
- Author
- 송윤흡
- Keywords
- III-V floating gate; III-V memory; Memory window; Molecular beam epitaxy; Polycrytalline gallium phosphide
- Issue Date
- 2020-11
- Publisher
- Korean Vacuum Society
- Citation
- Applied Science and Convergence Technology, v. 29, no. 6, page. 183-185
- Abstract
- We fabricated a capacitor with polycrystalline gallium phosphide (Poly-GaP), which has high thermal immunity for better CMOS compactness, as afloating gate. Using a phosphide beam flux, in a molecular beam epitaxy chamber, 0.5 μm of Poly-GaP film was successfully grown on silicon at 250℃. Its device characteristics were compared with capacitors that instead used Poly-GaAs and Poly-Si. It is revealed that the memory window for thecapacitor with the Poly-GaP floating film is comparable to the Poly-GaAs one, and still shows approximately twice the value of the Poly-Si. Based onthese results, we conclude that flash memory with a Poly-GaP floating material can provide not only a wider memory window due to significanttraps in III-V compounds, but also thermal immunity of the GaP material, which can be applied for 2D scaled flash memory.
- URI
- https://www.e-asct.org/journal/view.html?doi=10.5757/ASCT.2020.29.6.183https://repository.hanyang.ac.kr/handle/20.500.11754/172569
- ISSN
- 2288-6559
- DOI
- 10.5757/ASCT.2020.29.6.183
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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