Thermal Impedance Characterization Using Optical Measurement Assisted by Multi-Physics Simulation for Multi-Chip SiC MOSFET Module
- Title
- Thermal Impedance Characterization Using Optical Measurement Assisted by Multi-Physics Simulation for Multi-Chip SiC MOSFET Module
- Author
- 윤상원
- Keywords
- thermal impedance; multi-chip; SiC MOSFET; power module
- Issue Date
- 2020-11
- Publisher
- MDPI
- Citation
- MICROMACHINES, v. 11, no. 12, article no. 1060, page. 1060-1070
- Abstract
- In this paper, an approach to determine the thermal impedance of a multi-chip silicon carbide
(SiC) power module is proposed, by fusing optical measurement and multi-physics simulations.
The tested power module consists of four parallel SiC metal-oxide semiconductor field-e ect
transistors (MOSFETs) and four parallel SiC Schottky barrier diodes. This study mainly relies on
junction temperature measurements performed using fiber optic temperature sensors instead of
temperature-sensitive electrical parameters (TESPs). However, the fiber optics provide a relatively
slow response compared to other available TSEP measurement methods and cannot detect fast
responses. Therefore, the region corresponding to undetected signals is estimated via multi-physics
simulations of the power module. This method provides a compensated cooling curve. We analyze
the thermal resistance using network identification by deconvolution (NID). The estimated thermal
resistance is compared to that obtained via a conventional method, and the di erence is 3.8%.
The proposed fusion method is accurate and reliable and does not require additional circuits
or calibrations.
- URI
- https://www.mdpi.com/2072-666X/11/12/1060https://repository.hanyang.ac.kr/handle/20.500.11754/172136
- ISSN
- 2072-666X
- DOI
- 10.3390/mi11121060
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > AUTOMOTIVE ENGINEERING(미래자동차공학과) > Articles
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