Enhancement of the Electrical Performance and Bias Stability of RF-Sputtered Indium Tin Zinc Oxide Thin-Film Transistors with Vertical Stoichiometric Oxygen Control
- Title
- Enhancement of the Electrical Performance and Bias Stability of RF-Sputtered Indium Tin Zinc Oxide Thin-Film Transistors with Vertical Stoichiometric Oxygen Control
- Author
- 김재균
- Keywords
- indium tin zinc oxide (ITZO); thin-film transistors (TFTs); bilayer channel; bias stress stability; oxygen compensation
- Issue Date
- 2022-04
- Publisher
- AMER CHEMICAL SOC
- Citation
- ACS Applied Electronic Materials; 4/26/2022, Vol. 4 Issue 4, p1800-1806, 7p
- Abstract
- Indium tin zinc oxide (ITZO) thin-film transistors
(TFTs) with different channel structures are investigated. The
electrical performance and bias stress stability of bilayer-channel
ITZO TFTs are enhanced in comparison with those of singlechannel ITZO TFTs. The bilayer channel consists of an oxygenuncompensated channel layer and an oxygen-compensated capping
layer, while the single channel is an oxygen-uncompensated
channel layer. The electrical properties of the bilayer-channel
films are fine-tuned by adjusting their oxygen stoichiometry using
the oxygen-compensated capping layer. The X-ray photoelectron
spectroscopy measurements reveal that the bilayer channel shows
advantages over the single channel in terms of increased metal
oxide concentration and decreased oxygen vacancy and hydroxyl concentration. As a result, the bilayer-channel ITZO TFT exhibits a
saturation field-effect mobility of 17.31 cm2
/Vs, a sub-threshold swing of 0.24 V/dec, and a good operational bias stress stability in
comparison with the single-channel TFT. This work demonstrates that the bilayer-channel ITZO TFTs have great potential for nextgeneration display applications.
- URI
- https://pubs.acs.org/doi/10.1021/acsaelm.2c00054https://repository.hanyang.ac.kr/handle/20.500.11754/171038
- ISSN
- 26376113
- DOI
- 10.1021/acsaelm.2c00054
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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