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Effect of the RF bias on the plasma density in an argon inductively coupled plasma

Title
Effect of the RF bias on the plasma density in an argon inductively coupled plasma
Author
정진욱
Keywords
SILICON-CARBIDE; ELECTRON; CONTAMINATION; MOLYBDENUM; EJECTION; DAMAGE
Issue Date
2020-09
Publisher
AMER INST PHYSICS
Citation
PHYSICS OF PLASMAS, v. 27, no. 9, article no. 093508
Abstract
Changing the RF bias is widely used to control the ion energy in inductively coupled plasma (ICP). Here, the plasma densities were measured using the floating harmonic method at various ICP powers and RF bias power frequencies. It is observed that there is an RF bias power (P-B,P-min) that minimizes the plasma density. With increasing ICP power, P-B,P-min is increased. When the frequency is changed from 12.5MHz to 2MHz, P-B,P-min is decreased. To understand this phenomenon, the relative variation of the plasma density (delta n) with the RF bias power is considered based on a power balance equation. P-B,P-min is determined by delta n, and delta n changes based on the self-bias voltage caused by the RF bias power. Because the self-bias voltages change depending on the ICP power and frequency of the RF bias power, P-B,P-min is shifted by altering the ICP power and the RF bias power frequency. The results are in good agreement with the experimental results.
URI
https://aip.scitation.org/doi/10.1063/5.0015555https://repository.hanyang.ac.kr/handle/20.500.11754/170861
ISSN
1070-664X; 1089-7674
DOI
10.1063/5.0015555
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRICAL AND BIOMEDICAL ENGINEERING(전기·생체공학부) > Articles
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