Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices
- Title
- Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices
- Author
- ABBAS, HAIDER
- Keywords
- Resistive switching; CBRAM; ReRAM; Hybrid oxides; Unipolar switching; Bipolar switching
- Issue Date
- 2020-09
- Publisher
- ELSEVIER
- Citation
- APPLIED SURFACE SCIENCE, v. 525, article no. 146390
- Abstract
- We have investigated the switching mechanism of conductive bridge random access memory (CBRAM) with Ag/SnO2/Pt, Ag/InGaZnO(IGZO)/Pt and their hybrid oxide devices with different stacking sequence (Ag/SnO2/IGZO/Pt and Ag/ IGZO/SnO2/Pt). Typical bipolar resistive switching is observed in single layered devices and an Ag/SnO2/IGZO/Pt hybrid device. Interestingly, a stable and reproducible unipolar resistive switching is observed for a hybrid device with a stacking sequence of Ag/IGZO/SnO2/Pt. This result suggests that the staking sequence of dielectrics in the IGZO and SnO2 electrolyte determines unipolar or bipolar switching. The different switching types in the hybrid electrolyte are based on different migration or diffusion rates of Ag ions in the solid electrolyte and redox reaction rates at the electrodes. And as compared to single layered devices, the hybrid structured devices exhibit low operation voltages, higher I-ON/I-OFF ratio, uniform switching cycles and better endurance and retention characteristics. The results and switching mechanisms demonstrated here in hybrid devices can be extended to other hybrid devices based on CBRAM device.
- URI
- https://www.sciencedirect.com/science/article/pii/S0169433220311478?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/170497
- ISSN
- 0169-4332; 1873-5584
- DOI
- 10.1016/j.apsusc.2020.146390
- Appears in Collections:
- RESEARCH INSTITUTE[S](부설연구소) > RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE(산업과학연구소) > Articles
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