89 0

Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices

Title
Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices
Author
ABBAS, HAIDER
Keywords
Resistive switching; CBRAM; ReRAM; Hybrid oxides; Unipolar switching; Bipolar switching
Issue Date
2020-09
Publisher
ELSEVIER
Citation
APPLIED SURFACE SCIENCE, v. 525, article no. 146390
Abstract
We have investigated the switching mechanism of conductive bridge random access memory (CBRAM) with Ag/SnO2/Pt, Ag/InGaZnO(IGZO)/Pt and their hybrid oxide devices with different stacking sequence (Ag/SnO2/IGZO/Pt and Ag/ IGZO/SnO2/Pt). Typical bipolar resistive switching is observed in single layered devices and an Ag/SnO2/IGZO/Pt hybrid device. Interestingly, a stable and reproducible unipolar resistive switching is observed for a hybrid device with a stacking sequence of Ag/IGZO/SnO2/Pt. This result suggests that the staking sequence of dielectrics in the IGZO and SnO2 electrolyte determines unipolar or bipolar switching. The different switching types in the hybrid electrolyte are based on different migration or diffusion rates of Ag ions in the solid electrolyte and redox reaction rates at the electrodes. And as compared to single layered devices, the hybrid structured devices exhibit low operation voltages, higher I-ON/I-OFF ratio, uniform switching cycles and better endurance and retention characteristics. The results and switching mechanisms demonstrated here in hybrid devices can be extended to other hybrid devices based on CBRAM device.
URI
https://www.sciencedirect.com/science/article/pii/S0169433220311478?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/170497
ISSN
0169-4332; 1873-5584
DOI
10.1016/j.apsusc.2020.146390
Appears in Collections:
RESEARCH INSTITUTE[S](부설연구소) > RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE(산업과학연구소) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE