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Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on/off ratio field-effect switching applications

Title
Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on/off ratio field-effect switching applications
Author
성명모
Keywords
GRAPHENE; TRANSISTORS; TRANSPORT; DIODES; MOS2; HETEROSTRUCTURES; PERFORMANCE; DEFECTS
Issue Date
2020-08
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v. 12, no. 32, page. 16755-16761
Abstract
A two-dimensional (2D) WOx/ZnO stack reveals a unique carrier transport behavior, which can be utilized as a novel device element to achieve a very high on/off ratio (>10(6)) and an off current density lower than 1 nA cm(-2). These unique behaviors are explained by a dynamic band alignment between WOx and ZnO, which can be actively modulated by a gate bias. The performance of FET utilizing the WOx/ZnO stack is comparable to those of other 2D heterojunction devices; however, it has a unique benefit in terms of process integration because of very low temperature process capability (T < 110 degrees C). The high on/off switching with extremely low off current density utilizing the dynamic band alignment modulation at the WOx/ZnO stack can be a very useful element for future device applications, especially in monolithic 3D integration or flexible electronics.
URI
https://pubs.rsc.org/en/content/articlelanding/2020/NR/C9NR10988Ahttps://repository.hanyang.ac.kr/handle/20.500.11754/169799
ISSN
2040-3364; 2040-3372
DOI
10.1039/c9nr10988a
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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