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The coexistence of threshold and memory switching characteristics of ALD HfO(2)memristor synaptic arrays for energy-efficient neuromorphic computing

Title
The coexistence of threshold and memory switching characteristics of ALD HfO(2)memristor synaptic arrays for energy-efficient neuromorphic computing
Author
ABBAS, HAIDER
Keywords
LONG-TERM POTENTIATION; HAFNIUM OXIDE; PLASTICITY
Issue Date
2020-07
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v. 12, no. 26, page. 14120-14134
Abstract
The development of bioinspired electronic devices that can mimic the biological synapses is an essential step towards the development of efficient neuromorphic systems to simulate the functions of the human brain. Among various materials that can be utilized to attain electronic synapses, the existing semiconductor industry-compatible conventional materials are more favorable due to their low cost, easy fabrication and reliable switching properties. In this work, atomic layer deposited HfO2-based memristor synaptic arrays are fabricated. The coexistence of threshold switching (TS) and memory switching (MS) behaviors is obtained by modulating the device current. The TS characteristics are exploited to emulate essential synaptic functions. The Ag diffusive dynamics of our electronic synapses, analogous to the Ca(2+)dynamics in biological synapses, is utilized to emulate synaptic functions. Electronic synapses successfully emulate paired-pulse facilitation (PPF), post-tetanic potentiation (PTP), spike-timing-dependent plasticity (STDP), short-term potentiation (STP), long-term potentiation (LTP) and transition from STP to LTP with rehearsals. The psychological memorization model of short-term memory (STM) to long-term memory (LTM) transition is mimicked by image memorization in crossbar array devices. Reliable and repeatable bipolar MS behaviors with a low operating voltage are obtained by a higher compliance current for energy-efficient nonvolatile memory applications.
URI
https://pubs.rsc.org/en/content/articlelanding/2020/NR/D0NR02335Chttps://repository.hanyang.ac.kr/handle/20.500.11754/169347
ISSN
2040-3364; 2040-3372
DOI
10.1039/d0nr02335c
Appears in Collections:
RESEARCH INSTITUTE[S](부설연구소) > RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE(산업과학연구소) > Articles
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