Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송익현 | - |
dc.date.accessioned | 2022-01-14T01:37:38Z | - |
dc.date.available | 2022-01-14T01:37:38Z | - |
dc.date.issued | 2020-05 | - |
dc.identifier.citation | ELECTRONICS, v.9, no. 5, article no. 772 | en_US |
dc.identifier.issn | 2079-9292 | - |
dc.identifier.uri | https://www.mdpi.com/2079-9292/9/5/772 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/167123 | - |
dc.description.abstract | For performance-driven systems such as space-based applications, it is important to maximize the gain of radio-frequency amplifiers (RFAs) with a certain tolerance against radiation, temperature effects, and small form factor. In this work, we present a K-band, compact high-gain RFA using an f(T)-doubler topology in a silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) technology platform. The through-silicon vias (TSVs), typically used for small-size chip packaging purposes, have been effectively utilized as an adjustable matching element for input impedance, reducing the overall area of the chip. The proposed RFA, fabricated in a modest 0.35 mu m SiGe technology, achieves a gain of 14.1 dB at 20 GHz center frequency, and a noise figure (NF) of 11.2 dB at the same frequency, with a power consumption of 3.3 mW. The proposed design methodology can be used for achieving high gain, avoiding a complex multi-stage amplifier design approach. | en_US |
dc.language.iso | en | en_US |
dc.publisher | MDPI | en_US |
dc.subject | extreme-environment electronics | en_US |
dc.subject | f T doubler | en_US |
dc.subject | heterojunction bipolar transistor (HBT) | en_US |
dc.subject | radio-frequency amplifier (RFA) | en_US |
dc.subject | silicon-germanium (SiGe) | en_US |
dc.subject | through-silicon-via (TSV) | en_US |
dc.title | Design and analysis of fT-doubler-based RF amplifiers in SiGe HBT technology | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.3390/electronics9050772 | - |
dc.relation.journal | ELECTRONICS | - |
dc.contributor.googleauthor | Sarker, Md Arifur R. | - |
dc.contributor.googleauthor | Song, Ickhyun | - |
dc.relation.code | 2020049669 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | isong | - |
dc.identifier.orcid | https://orcid.org/0000-0002-7669-9853 | - |
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