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Current–voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetector

Title
Current–voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetector
Author
오재응
Issue Date
2021-02
Publisher
IOP PUBLISHING LTD
Citation
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v. 36, No. 3, Article no. 035010, 9pp
Abstract
Understanding the metal/semiconductor interface is very significant for real-time optoelectronic device applications. In particular, the presence of interface states and other defects is detrimental to photodetector applications. In this study, the electrical transport properties of a pristine gallium nitride (GaN) nanorod (NR)-based Schottky diode are demonstrated at different temperatures by current–voltage characteristics in the range of 200–360 K. An enhancement in the Schottky barrier height (0.65 eV for hydrogen-passivated GaN NRs compared to 0.56 eV for pristine ones) is noticed. The effect of deep traps residing within the forbidden gap of GaN NRs is investigated using deep-level transient spectroscopy. Two deep defects are found at EC − 0.19 eV and EC − 0.31 eV in pristine GaN NRs; the EC − 0.31 eV defect peak is attributed to VGa or nitrogen interstitials. After hydrogenation the peak at EC − 0.31 eV is suppressed and that at EC − 0.19 eV remains unchanged. The hydrogenated GaN NRs show a high photoresponse, which is nearly 2.83 times higher than that of pristine GaN NRs. The hydrogenated GaN NRs exhibit a photoresponsivity of 4.7 $ \times $ 10−3 A W−1 and detectivity of 1.24 $ \times $ 1010 Jones under UV illumination of λ = 382 nm. The enhanced performance is attributed to the deep defect passivation by hydrogenation along with the surface-state-free interface between the GaN NRs and metal contacts. The experimental results demonstrate the significance of hydrogen treatment use in the fabrication of GaN-based optoelectronic devices.
URI
https://iopscience.iop.org/article/10.1088/1361-6641/abda62https://repository.hanyang.ac.kr/handle/20.500.11754/166992
ISSN
0268-1242; 1361-6641
DOI
10.1088/1361-6641/abda62`
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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