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dc.contributor.author오재응-
dc.date.accessioned2021-12-23T04:10:21Z-
dc.date.available2021-12-23T04:10:21Z-
dc.date.issued2021-02-
dc.identifier.citationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v. 36, No. 3, Article no. 035010, 9ppen_US
dc.identifier.issn0268-1242-
dc.identifier.issn1361-6641-
dc.identifier.urihttps://iopscience.iop.org/article/10.1088/1361-6641/abda62-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/166992-
dc.description.abstractUnderstanding the metal/semiconductor interface is very significant for real-time optoelectronic device applications. In particular, the presence of interface states and other defects is detrimental to photodetector applications. In this study, the electrical transport properties of a pristine gallium nitride (GaN) nanorod (NR)-based Schottky diode are demonstrated at different temperatures by current&ndash;voltage characteristics in the range of 200&ndash;360 K. An enhancement in the Schottky barrier height (0.65 eV for hydrogen-passivated GaN NRs compared to 0.56 eV for pristine ones) is noticed. The effect of deep traps residing within the forbidden gap of GaN NRs is investigated using deep-level transient spectroscopy. Two deep defects are found at EC &minus; 0.19 eV and EC &minus; 0.31 eV in pristine GaN NRs; the EC &minus; 0.31 eV defect peak is attributed to VGa or nitrogen interstitials. After hydrogenation the peak at EC &minus; 0.31 eV is suppressed and that at EC &minus; 0.19 eV remains unchanged. The hydrogenated GaN NRs show a high photoresponse, which is nearly 2.83 times higher than that of pristine GaN NRs. The hydrogenated GaN NRs exhibit a photoresponsivity of 4.7 $\times$ 10&minus;3 A W&minus;1 and detectivity of 1.24 $\times$ 1010 Jones under UV illumination of &lambda; = 382 nm. The enhanced performance is attributed to the deep defect passivation by hydrogenation along with the surface-state-free interface between the GaN NRs and metal contacts. The experimental results demonstrate the significance of hydrogen treatment use in the fabrication of GaN-based optoelectronic devices.en_US
dc.language.isoen_USen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.titleCurrent&ndash;voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetectoren_US
dc.typeArticleen_US
dc.relation.volume36-
dc.identifier.doi10.1088/1361-6641/abda62`-
dc.relation.page35010-35018-
dc.relation.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGY-
dc.relation.code2021003834-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDIVISION OF ELECTRICAL ENGINEERING-
dc.identifier.pidjoh-
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COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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