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dc.contributor.author전형탁-
dc.date.accessioned2021-11-22T01:53:18Z-
dc.date.available2021-11-22T01:53:18Z-
dc.date.issued2020-05-
dc.identifier.citationNANOTECHNOLOGY, v. 31, no. 35, article no. 355702en_US
dc.identifier.issn1361-6528-
dc.identifier.issn0957-4484-
dc.identifier.urihttps://iopscience.iop.org/article/10.1088/1361-6528/ab92cc-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/166385-
dc.description.abstractTin disulfide (SnS2) has emerged as a promising two-dimensional (2D) material due to its excellent electrical and optical properties. However, research into 2D SnS(2)has mainly focused on its synthesis procedures and applications; its stability to humidity and temperature has yet to be studied. In this work, 2D SnS(2)thin films were grown by atomic layer deposition (ALD) and characterized by various tools, such as x-ray diffraction, Raman analysis, and transmission electron spectroscopy. Characterization reveals that ALD-grown SnS(2)thin films are a high-quality 2D material. After characterization, a four-inch-wafer-scale uniformity test was performed by Raman analysis. Owing to the quality, large-area growth enabled by the ALD process, 98.72% uniformity was obtained. Finally, we calculated the thermodynamic equations for possible reactions between SnS(2)and H2O to theoretically presurmise the oxidation of SnS(2)during accelerated humidity and temperature testing. After the accelerated humidity and temperature test, x-ray diffraction, Raman analysis, and Auger electron spectroscopy were performed to check whether SnS(2)was oxidized or not. Our data revealed that 2D SnS(2)thin films were stable at humid conditions.en_US
dc.description.sponsorshipThis work was supported by the Basic Science Research Program (NRF-2019R1H1A2100796) through the National Research Foundation of Korea (NRF) by the Ministry of Science and ICT (MSIT), Korea. This work was also supported by the Technology Innovation Program (or Industrial Strategic Technology Development Program-the Material and Component Industrial Future Growth Engine Program) (20006551, Development of APSALD equipment and TFE material process for flexible OLED encapsulation) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).en_US
dc.language.isoenen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.subjecttin disulphideen_US
dc.subject2D materialsen_US
dc.subjectatomic layer depositionen_US
dc.subjectaccelerated temperature and humidity testen_US
dc.subjectlarge areaen_US
dc.titleAccelerated temperature and humidity testing of 2D SnS(2)thin films made via four-inch-wafer-scale atomic layer depositionen_US
dc.typeArticleen_US
dc.relation.no35-
dc.relation.volume31-
dc.identifier.doi10.1088/1361-6528/ab92cc-
dc.relation.page355702-355711-
dc.relation.journalNANOTECHNOLOGY-
dc.contributor.googleauthorLee, Namgue-
dc.contributor.googleauthorChoi, Hyeongsu-
dc.contributor.googleauthorPark, Hyunwoo-
dc.contributor.googleauthorChoi, Yeonsik-
dc.contributor.googleauthorYuk, Hyunwoo-
dc.contributor.googleauthorLee, JungHoon-
dc.contributor.googleauthorLee, Sung Gwon-
dc.contributor.googleauthorLee, Eun Jong-
dc.contributor.googleauthorJeon, Hyeongtag-
dc.relation.code2020046241-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentSCHOOL OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidhjeon-
dc.identifier.researcherIDP-3193-2015-
dc.identifier.orcidhttps://orcid.org/0000-0003-2502-7413-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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