Investigation of electrical performance and operation stability of RF-sputtered InSnZnO thin film transistors by oxygen-ambient rapid thermal annealing
- Title
- Investigation of electrical performance and operation stability of RF-sputtered InSnZnO thin film transistors by oxygen-ambient rapid thermal annealing
- Author
- 김재균
- Keywords
- sputter process; indium-tin-zinc-oxide; oxygen vacancy; oxygen control; rapid thermal annealing
- Issue Date
- 2020-10
- Publisher
- IOP PUBLISHING LTD
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v. 35, no. 12, Article no. 125019, 10pp
- Abstract
- We investigated the electrical properties and operational stability of amorphous indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs). We fabricated the a-ITZO TFTs using deposition by radio frequency sputtering at room temperature followed by a rapid thermal annealing (RTA) process at different temperatures and oxygen pressure (P-O2). This is a more practical annealing route compared to a conventional furnace. Based on film densification and oxygen vacancy optimization, the a-ITZO TFTs exhibited 9.8 cm(2) Vs(-1), 0.82 V/decade and 1.39 V, for saturation mobility, sub-threshold swing and threshold voltage, respectively. Operation stability tests and hysteresis behavior of a-ITZO TFTs suggest that oxygen vacancy concentration of a-ITZO thin films gradually decreases under higher P-O2, consequently affecting the threshold voltage and the shift seen after a gate bias stress test. This observation suggests that gate bias stress and hysteresis stability of an a-ITZO device is due to the effect of oxygen-controlled pressure in the RTA process. This a-ITZO TFTs electrical characterization qualitatively coincides with x-ray photoelectron spectroscopic analyses of oxygen vacancy concentration in a-ITZO thin films. Thus, our systematic a-ITZO thin film optimization using the oxygen-ambient RTA process is a practical basis for high-performance amorphous oxide semiconductor TFT post-annealing methods.
- URI
- https://iopscience.iop.org/article/10.1088/1361-6641/abbc8fhttps://repository.hanyang.ac.kr/handle/20.500.11754/165319
- ISSN
- 0268-1242; 1361-6641
- DOI
- 10.1088/1361-6641/abbc8f
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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