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Contamination Mechanism of Ceria Particles on the Oxide Surface after the CMP Process

Title
Contamination Mechanism of Ceria Particles on the Oxide Surface after the CMP Process
Author
김태곤
Keywords
BibTeX; RIS
Issue Date
2020-12
Publisher
ELECTROCHEMICAL SOC INC
Citation
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v. 9, no. 12, Article no. 124004, 12pp
Abstract
The contamination behavior of ceria particles (50 and 100 nm) with oxide surfaces at pH 4 and 8 was studied using dipping and polishing conditions. Higher contamination at pH 4 than pH 8 was observed for dipping cases. In contrast, pH 8 conditions produced higher contamination than pH 4 for polishing cases. The difference in the contamination between dipping and polishing could be attributed to electrostatic attraction and chemical bonding. During polishing, weak or no chemical bonding may occur at pH 4, whereas the Ce-O-Si bond may form due to the surface charges of ceria and silica at pH 8. XPS analysis revealed that strong additional peaks related to Ce-O-Si bonding were detected for O 1s spectra at a binding energy of around 532 eV for surfaces polished at pH 8. Similar results were observed for 50 nm as well as 100 nm ceria particles. Based on the results, we concluded that ceria particles would have different adhesion behaviors for dipping and polishing at the same pH value. Also, higher ceria adhesion was observed at higher pH compared to lower pH during the CMP process, which was correlated to strong Ce-O-Si chemical bond formation due to the CMP conditions.
URI
https://iopscience.iop.org/article/10.1149/2162-8777/abcf13https://repository.hanyang.ac.kr/handle/20.500.11754/165005
ISSN
2162-8769; 2162-8777
DOI
10.1149/2162-8777/abcf13
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ETC
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