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Study on the degradation mechanisms of thermal and defect properties in light-emitting diodes based on noncontact laser technique

Title
Study on the degradation mechanisms of thermal and defect properties in light-emitting diodes based on noncontact laser technique
Author
정동광
Alternative Author(s)
정동광
Advisor(s)
심종인
Issue Date
2021. 8
Publisher
한양대학교
Degree
Doctor
Abstract
This thesis reports the research results on the reliability and performance of lightemitting diodes (LEDs) as the solid-state lighting source. In particular, the research projects are focused on the thermal property and defect characteristics of gallium nitride (GaN) based LEDs, and the effect of the thermal property and defect characteristics on the reliability and performance. First, an overview of the current research status and the latest technological level of the GaN-based LEDs are presented in chapter 1. The issues of reliability and performance are still the most important challenges for GaN-based LEDs. To deeply understand the reliability and performance, it is necessary to consider the electrical, optical and thermal properties of GaN-based LEDs. Most previous research works had studied the degradation effect on the properties of GaN-based LEDs; however, the quantitative analysis of degradation/failure mechanisms is still necessary. Then, characterizations of thermal and defect as the main degradation characterization of GaN-based LEDs is presented in this thesis. First, the characterization methods for thermal and defect are separately described in chapter 2 and chapter 3. Second, the effects of thermal and defect on degradation/failure are analyzed and researched the interrelationships between the thermal property and defect characteristics in chapter 4. In all experimental cases, the effects of thermal and/or defect have been emphasized. This thesis starts with an in-depth understanding of the LED structures and the related issues and finally aims to i. Accurate junction temperature can be calculated at the high current region ii. Investigation and analysis of defect mechanisms responsible for LED degradation iii. Analysis of relationships among thermal behavior, defect characteristics and degradation mechanisms. The research work provided important information on the evaluation of reliability and performance on the LED chip level through a series of experiments.
URI
http://hanyang.dcollection.net/common/orgView/200000490482https://repository.hanyang.ac.kr/handle/20.500.11754/163656
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > ELECTRONIC COMMUNICATION ENGINEERING(전자통신공학과) > Theses (Ph.D.)
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