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dc.contributor.author심종인-
dc.date.accessioned2021-07-28T06:16:40Z-
dc.date.available2021-07-28T06:16:40Z-
dc.date.issued2020-01-
dc.identifier.citationECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v. 9, Issue. 1, Article no. 015021, 5ppen_US
dc.identifier.issn2162-8769-
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85081715809&origin=inward&txGid=0c8b3cd1b56546a9a6ea292d3b0c3af2-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/163308-
dc.description.abstractTo enhance the light output of blue InGaN-based light emitting diodes (LEDs), a buried stripe-type n-electrode, expanded stripe-type p-electrode, and reflective p-bonding pad were employed. Flip-chip (FC) LEDs with the expanded p-electrode gave forward voltages of 2.99–3.11 V at 100 mA and series resistances of 3.28–3.94 Ω. The expanded p-electrode FCLED fabricated with 375 nm-thick window and TiO2 adhesion layers produced 22.7% higher light output at 21 A/cm2 than conventional FCLEDs. The expanded p-electrode FCLEDs revealed better current spreading efficiency than the c-FCLED, indicating the importance of the use of an optimised window and TiO2 adhesion layers.en_US
dc.language.isoen_USen_US
dc.publisherELECTROCHEMICAL SOC INCen_US
dc.titleImprovement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Paden_US
dc.typeArticleen_US
dc.relation.no015021-
dc.relation.volume9-
dc.identifier.doi10.1149/2.0462001JSS-
dc.relation.page1-5-
dc.relation.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY-
dc.contributor.googleauthorKim, Jong-Ho-
dc.contributor.googleauthorLee, Yong Won-
dc.contributor.googleauthorIm, Hyeong-Seop-
dc.contributor.googleauthorOh, Chan-Hyoung-
dc.contributor.googleauthorKang, Daesung-
dc.contributor.googleauthorSeong, Tae-Yeon-
dc.contributor.googleauthorAmano, Hiroshi-
dc.contributor.googleauthorShim, Jong-In-
dc.relation.code2020048471-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF PHOTONICS AND NANOELECTRONICS-
dc.identifier.pidjishim-


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