Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2021-05-14T06:51:18Z | - |
dc.date.available | 2021-05-14T06:51:18Z | - |
dc.date.issued | 2020-03 | - |
dc.identifier.citation | NANOTECHNOLOGY, v. 31, no. 24, article no. 245201 | en_US |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1088/1361-6528/ab76f5 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/162055 | - |
dc.description.abstract | We have optimized the responsivity and response speed of a beta-Ga2O3-based photodetector. The beta-Ga2O3 thin films were deposited on a glass substrate under various oxygen partial pressures from 0 to 50 mTorr using pulsed laser deposition. Time-response measurements show that the as-grown beta-Ga2O3 at an oxygen partial pressure of 50 mTorr has the fastest response speed and decay times of 33 and 100 ms, which are better than those prepared at lower oxygen pressures. This sample also showed a high photoresponsivity of 5 A W-1 and detectivity of 10(12) cmHz(1/2)/W. The high performance of the beta-Ga2O3 detector grown at the oxygen partial pressure of 50 mTorr might be due to the reduction of oxygen vacancies caused by the increase in oxygen content during deposition. The results reveal the importance of the oxygen processing gas in promoting photodetector performance. | en_US |
dc.description.sponsorship | This work was also supported in part by a National Research Foundation of Korea (NRF) Grant funded by the Korean government (MSIP) (NRF-2018R1A2A3074921). | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | beta-G(2)O(3) | en_US |
dc.subject | pulsed laser deposition | en_US |
dc.subject | oxygen pressures | en_US |
dc.subject | photoresponsivity | en_US |
dc.title | The enhancement mechanism of photo-response depending on oxygen pressure for Ga2O3 photo detectors | en_US |
dc.type | Article | en_US |
dc.relation.no | 24 | - |
dc.relation.volume | 31 | - |
dc.identifier.doi | 10.1088/1361-6528/ab76f5 | - |
dc.relation.page | 245201-245207 | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Vu, Thi Kim Oanh | - |
dc.contributor.googleauthor | Lee, Dong Uk | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.relation.code | 2020046241 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
dc.identifier.orcid | https://orcid.org/0000-0003-3373-963X | - |
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