Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2021-05-14T01:56:07Z | - |
dc.date.available | 2021-05-14T01:56:07Z | - |
dc.date.issued | 2020-03 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v. 41, no. 3, page. 433-436 | en_US |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8962124 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/162035 | - |
dc.description.abstract | We demonstrated the monolithic 3D (M3D) integration of InGaAs photodetectors (PDs) on silicon-on-insulator metal-oxide-semiconductor field-effect transistors (SOI-MOSFETs) by the sequential process of InGaAs PDs on pre-fabricated SOI-MOSFETs. InGaAs PDs and SOI MOSFETs showed their original performances after integration and sequential process thanks to the low-temperature process. In addition, the integrated devices successfully performed the fundamental readout circuit operation such as direct injection and source follower per detector (SFD) by connecting transistors (Trs) and PDs. By illuminating 1550 nm laser on InGaAs PDs, the different behaviors of output voltages were clearly obtained according to the Tr's on/off state. From these results, we believe that this monolithic 3D integration method could be a feasible approach toward high-resolution multicolor imaging systems. | en_US |
dc.description.sponsorship | This work was supported in part by the National Research Foundation of Korea (NRF) Grant funded by Ministry of Science and ICT (MSIT) under Grant 2016910562, Grant 201901074452, Grant 201902072072, and Grant 201902071513, in part by the KAIST Startup Funding under Grant G04180061, in part by the G-CORE under Grant N11200014, in part by the NNFC OI LAB Project, and in part by the BK21 Plus. The review of this letter was arranged by EditorO. Manasreh. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Monolithic integration | en_US |
dc.subject | InGaAs imager | en_US |
dc.subject | high-resolution imaging | en_US |
dc.title | Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process | en_US |
dc.type | Article | en_US |
dc.relation.no | 3 | - |
dc.relation.volume | 41 | - |
dc.identifier.doi | 10.1109/LED.2020.2966986 | - |
dc.relation.page | 433-436 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.googleauthor | Geum, Dae-Myeong | - |
dc.contributor.googleauthor | Kim, Seong Kwang | - |
dc.contributor.googleauthor | Lee, Subin | - |
dc.contributor.googleauthor | Lim, Donghwan | - |
dc.contributor.googleauthor | Kim, Hyung-Jun | - |
dc.contributor.googleauthor | Choi, Chang Hwan | - |
dc.contributor.googleauthor | Kim, Sang-Hyeon | - |
dc.relation.code | 2020051426 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
dc.identifier.orcid | https://orcid.org/0000-0002-8386-3885 | - |
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