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dc.contributor.author임원빈-
dc.date.accessioned2021-05-06T02:23:45Z-
dc.date.available2021-05-06T02:23:45Z-
dc.date.issued2020-02-
dc.identifier.citationNANO LETTERS, v. 20, no. 1, page. 66-74en_US
dc.identifier.issn1530-6984-
dc.identifier.issn1530-6992-
dc.identifier.urihttps://pubs.acs.org/doi/10.1021/acs.nanolett.9b02978-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/161893-
dc.description.abstractTactile pressure sensors as flexible bioelectronic devices have been regarded as the key component for recently emerging applications in electronic skins, health monitoring devices, or human-machine interfaces. However, their narrow range of sensible pressure and their difficulty in forming high integrations represent major limitations for various potential applications. Herein, we report fully integrated, active-matrix arrays of pressure-sensitive MoS2 transistors with mechanoluminescent layers and air dielectrics for wide detectable range from footsteps to cellular motions. The inclusion of mechanoluminescent materials as well as air spaces can increase the sensitivity significantly over entire pressure regimes. In addition, the high integration capability of these active-matrix sensory circuitries can enhance their spatial resolution to the level sufficient to analyze the pressure distribution in a single cardiomyocyte. We envision that these wide-range pressure sensors will provide a new strategy toward next-generation electronics at biomachine interfaces to monitor various mechanical and biological phenomena at single-cell resolution.en_US
dc.description.sponsorshipThis work was supported by the Ministry of Science & ICT (MSIT) and the Ministry of Trade, Industry and Energy (MOTIE) of Korea through the National Research Foundation (2019R1A2B5B03069358 and 2016R1A5A1009926), the Bio & Medical Technology Development Program (2018M3A9F1021649), the Nano Material Technology Development Program (2015M3A7B4050308 and 2016M3A7B4910635), and the Industrial Technology Innovation Program (10080577). Also, the authors thank financial support by the Institute for Basic Science (IBS-R026-D1) and the Research Program (2018-22-0194) funded by Yonsei University.en_US
dc.language.isoenen_US
dc.publisherAMER CHEMICAL SOCen_US
dc.subjectMoS2 transistoren_US
dc.subjectpressure sensoren_US
dc.subjectmechanoluminescenceen_US
dc.subjectflexible electronicsen_US
dc.subjectbioelectronicsen_US
dc.titleMechanoluminescent, Air-Dielectric MoS2 Transistors as Active-Matrix Pressure Sensors for Wide Detection Ranges from Footsteps to Cellular Motionsen_US
dc.typeArticleen_US
dc.relation.no.-
dc.relation.volume20-
dc.identifier.doi10.1021/acs.nanolett.9b02978-
dc.relation.page66-74-
dc.relation.journalNANO LETTERS-
dc.contributor.googleauthorJang, Jiuk-
dc.contributor.googleauthorKim, Hyobeom-
dc.contributor.googleauthorJi, Sangyoon-
dc.contributor.googleauthorKim, Ha Jun-
dc.contributor.googleauthorKang, Min Soo-
dc.contributor.googleauthorKim, Tae Soo-
dc.contributor.googleauthorWon, Jong-eun-
dc.contributor.googleauthorLee, Jae-Hyun-
dc.contributor.googleauthorCheon, Jinwoo-
dc.contributor.googleauthorIm, Won Bin-
dc.relation.code2020053284-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidimwonbin-
dc.identifier.orcidhttp://orcid.org/0000-0003-2473-4714-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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