Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2021-04-06T01:28:10Z | - |
dc.date.available | 2021-04-06T01:28:10Z | - |
dc.date.issued | 2020-02 | - |
dc.identifier.citation | NANOMATERIALS, v. 10, no. 2, article no. 297 | en_US |
dc.identifier.issn | 2079-4991 | - |
dc.identifier.uri | https://www.mdpi.com/2079-4991/10/2/297 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/161199 | - |
dc.description.abstract | In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current-voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a large ratio of 10(3)-10(5) at the forward to reverse current at +/- 1 V. The interface states and non-interacting point defect complex between the Pd metal and FS-GaN crystals induced the inhomogeneity of the barrier height and large ideality factors. Furthermore, we revealed that the electronic conduction of the devices prefers the thermionic field emission (TFE) transport, not the thermionic emission (TE) model, over the entire measurement conditions. The investigation on deep level transient spectroscopy (DLTS) suggests that non-interacting point-defect-driven tunneling influences the charge transport. This investigation about charge transport paves the way to achieving next-generation optoelectronic applications using Si-based FS-GaN Schottky diodes. | en_US |
dc.description.sponsorship | This research was supported by Korea Basic Science Institute Research Grant No. C070300 and R40001 (to M. Lee) and the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Education (Nos 2018R1D1A1B07042909, and 2016R1A6A1A03012069), and the Ministry of Science and ICT (NRF-2018R1A2A3074921). | en_US |
dc.language.iso | en | en_US |
dc.publisher | MDPI | en_US |
dc.subject | freestanding GaN | en_US |
dc.subject | HVPE | en_US |
dc.subject | Schottky diodes | en_US |
dc.subject | silicon | en_US |
dc.subject | transport mechanism | en_US |
dc.title | Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 10 | - |
dc.identifier.doi | 10.3390/nano10020297 | - |
dc.relation.page | 297-303 | - |
dc.relation.journal | NANOMATERIALS | - |
dc.contributor.googleauthor | Lee, Moonsang | - |
dc.contributor.googleauthor | Ahn, Chang Wan | - |
dc.contributor.googleauthor | Vu, Thi Kim Oanh | - |
dc.contributor.googleauthor | Lee, Hyun Uk | - |
dc.contributor.googleauthor | Jeong, Yesul | - |
dc.contributor.googleauthor | Hahm, Myung Gwan | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.contributor.googleauthor | Park, Sungsoo | - |
dc.relation.code | 2020052113 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
dc.identifier.orcid | https://orcid.org/0000-0003-3373-963X | - |
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