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GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings

Title
GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings
Author
심종인
Keywords
DBR laser; DFB laser; GaInAsP/InP; CH4/H2-RIE; benzocyclobutene
Issue Date
2001-12
Publisher
INST PURE APPLIED PHYSICS
Citation
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, v. 40, issue. 12, page. 6845-6851
Abstract
Deep-etching technology, which is a very simple fabrication process and requires only one lithography and one etching step without any regrowth, is applied to realize 1.5-1.55 mum wavelength GaInAsP/InP vertical grating (VG) distributed reflector (DR) lasers, which consist of a distributed feedback (DFB) region with the VG and a high-reflectivity distributed Bragg reflector (DBR) region. First, the coupling coefficient of the VG is theoretically estimated and fundamental lasing characteristics of the VG-DR lasers are investigated. Then, the fabrication process of the VG-DR lasers and the experimentally achieved fundamental lasing characteristics are given. A threshold current of 12.4 mA and a differential quantum efficiency of 42% from the front cleaved facet are achieved for a 220-mum-long and 5-mum-wide device. A submode suppression ratio (SMSR) of 33 dB at a bias current of 2.4 times the threshold is obtained.
URI
https://iopscience.iop.org/article/10.1143/JJAP.40.6845https://repository.hanyang.ac.kr/handle/20.500.11754/160466
ISSN
0021-4922
DOI
10.1143/jjap.40.6845
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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