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열화가 억제된 다결정 실리콘 박막 트랜지스터의 제작 및 소자의 열화 특성 분석

Title
열화가 억제된 다결정 실리콘 박막 트랜지스터의 제작 및 소자의 열화 특성 분석
Author
박진석
Keywords
TFT; Poly Si; LDD; LCD
Issue Date
2001-10
Publisher
대한전기학회
Citation
전기학회논문지 C, v. 50C, no. 10, page. 489-493
Abstract
LDD 및 offset 구조를 가지는 n 채널 다결정 실리콘 박막 트랜지스터를 제조한 후 전기적 특성 변화 메카니즘을 조사하였다. The on-current of offset and LDD structured devices is slightly decreased while the off-current are remarkably reduced and almost constant independent of gate and drain voltage because offset and LDD regions behave as a series resistance and reduce the lateral electric field in the drain depletion. Degradation of these devices is dependent upon the offset and LDD region length rather than doping concentration in these regions. Also, degradation mechanism has been related to the interface generation rather than the hot carrier injection into gate oxide.
URI
https://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE01276495https://repository.hanyang.ac.kr/handle/20.500.11754/160120
ISSN
1229-246X
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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