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Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors

Title
Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
Author
박진성
Keywords
OXIDE; HFO2
Issue Date
2020-01
Publisher
AMER INST PHYSICS
Citation
AIP ADVANCES, v. 10, no. 1, article no. 015239
Abstract
High-dielectric constant (k) materials have attracted a lot of attention for use as gate insulators (GIs) that enable low-voltage operation of thin film transistors (TFTs). However, high-k GIs also induce severe degradation in TFT characteristics, such as effective mobility (mu(eff)). Therefore, in this study, a stacked GI structure of ZrO2 and SiO2 was investigated. The mechanism by which the properties of the high-k GI influence TFT operating characteristics was revealed. Based on this mechanism, an optimized stacked GI structure that exhibited a low subthreshold swing and high mu eff was found and used to achieve low-voltage operation in a TFT device. (c) 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
URI
https://aip.scitation.org/doi/10.1063/1.5126151https://repository.hanyang.ac.kr/handle/20.500.11754/160090
ISSN
2158-3226
DOI
10.1063/1.5126151
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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