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Mechanism Analysis and Cu Interconnection Process Application of Cu Electrochemical Polishing

Title
Mechanism Analysis and Cu Interconnection Process Application of Cu Electrochemical Polishing
Other Titles
구리 전해연마의 메커니즘 분석 및 구리배선공정 적용에 관한 연구
Author
박기문
Alternative Author(s)
박기문
Advisor(s)
유봉영
Issue Date
2021. 2
Publisher
한양대학교
Degree
Doctor
Abstract
Mechanism of Cu electrochemical polishing (ECP) and application of Cu planarization using Cu ECP were studied. Conventional electrochemical analysis methods were conducted to investigate the mechanism. Diffusion of water acceptors was confirmed by measuring electrolysis currents of water acceptor along the distance from the Cu surface using the scanning electrochemical microscopy system. Mechanism of Cu electrochemical polishing was organized by using all results. Cu ECP was applied for planarization method of RDL and TSV process. At the RDL process, effects of Cu overburden profiles on Cu electrochemical polishing were investigated. Uniform Cu overburden polishing was observed when overburden area was similar at all width patterns. Cu ECP application at the TSV was also conducted. This Cu planarization process was finished in few minutes and current profile was designated to the end point of ECP process. These results were shown the potential that CMP can be alternated to Cu ECP.
URI
https://repository.hanyang.ac.kr/handle/20.500.11754/159378http://hanyang.dcollection.net/common/orgView/200000485610
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > ADVANCED MATERIALS ENGINEERING(첨단소재공학과) > Theses (Ph.D.)
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