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Point of Use Regeneration of Oxide Chemical Mechanical Planarization Slurry by Filterations

Title
Point of Use Regeneration of Oxide Chemical Mechanical Planarization Slurry by Filterations
Author
박진구
Keywords
CMP; oxide slurry; regenerated slurry; UF filtration; RO filtration; pH, specific gravity; conductivity; TEOS removal rate; microscratch; defect density
Issue Date
2002-11
Publisher
Japan Society of Applied Physics
Citation
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, v. 41, issue. 11, page. 6342-6346
Abstract
The main Purpose of this study was to regenerate the used oxide slurry using filters. The solid content in regenerated slurry was controlled by ultra fine (UF) filtration that extracts only the solution from diluted slurry. Reverse osmosis (RO) filtration was adapted to recover chemicals added in the original slurry formulation by rejecting pure deionized (DI) water from slurry solutions collected by UF filtration. The specific gravity, conductivity, and pH were adjusted by the filtration and addition of KOH in the regenerated slurry. The new slurry was intentionally added into the regenerated slurry to reduce the process time and increase the lifetime of used slurry. The same removal rate of tefraethylorthosilicate (TEOS) oxide was observed when chemical mechanical planarization (CMP) was performed using the regenerated oxide slurry. The particles size of the regenerated slurry was, smaller than that of the original slurry. No microscratches were observed in the wafer polished by the regenerated slurry. Also, the defect densities of polished oxides were decreased after polishing with the regenerated slurry.
URI
https://iopscience.iop.org/article/10.1143/JJAP.41.6342/metahttps://repository.hanyang.ac.kr/handle/20.500.11754/157975
ISSN
0021-4922
DOI
10.1143/jjap.41.6342
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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