Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2021-01-19T02:10:21Z | - |
dc.date.available | 2021-01-19T02:10:21Z | - |
dc.date.issued | 2019-12 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 11, no. 50, page. 47025-47036 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acsami.9b14462 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/157120 | - |
dc.description.abstract | Effects of lanthanum (La) loading on the structural, optical, and electrical properties of tin monoxide (SnO) films were examined as a p-type semiconducting layer. La loading up to 1.9 atom % caused the texturing of the tetragonal SnO phase with a preferential orientation of (101), which was accompanied by the smoother surface morphology. Simultaneously, the incorporated La cation suppressed the formation of n-type SnO2 in the La-doped SnO film and widened its optical band gap. These variations allowed the 1.9 atom % La-loaded SnO film to have a high hole mobility and carrier density, compared with the La-free control SnO film. The superior semiconducting property was reflected in the p-type thin-film transistor (TFT). The control SnO TFTs exhibited the field-effect mobility (mu(SAT)) an I-ON/OFF ratio of 0.29 cm(2) V-1 s(-1) and 5.4 x 10(2), respectively. Enhancement in the mu(SAT) value and I-ON/OFF ratio was observed for the TFTs with the 1.9 atom % La-loaded SnO channel layer: they were improved to 1.2 cm(2) V-1 s(-1) and 7.3 x 10(3), respectively. The reason for this superior performance was discussed on the basis of smoother morphology, suppression of disproportionation conversion from Sn2+ to Sn + Sn4+, and reduced gap-state density. | en_US |
dc.description.sponsorship | This work was supported by a National Research Foundation (NRF) grant funded by the Korean government (NRF-2019R1A2C1089027) and Samsung Research Funding Center for Future Technology through Samsung Electronics. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | cosputtering | en_US |
dc.subject | p-type semiconductor | en_US |
dc.subject | tin monoxide | en_US |
dc.subject | lanthanum doping | en_US |
dc.subject | thin-film transistor | en_US |
dc.title | Lanthanum Doping Enabling High Drain Current Modulation in a p-Type Tin Monoxide Thin-Film Transistor | en_US |
dc.type | Article | en_US |
dc.relation.no | 50 | - |
dc.relation.volume | 11 | - |
dc.identifier.doi | 10.1021/acsami.9b14462 | - |
dc.relation.page | 47025-47036 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Yim, Sungyeon | - |
dc.contributor.googleauthor | Kim, Taikyu | - |
dc.contributor.googleauthor | Yoo, Baekeun | - |
dc.contributor.googleauthor | Xu, Hongwei | - |
dc.contributor.googleauthor | Youn, Yong | - |
dc.contributor.googleauthor | Han, Seungwu | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2019002549 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
dc.identifier.orcid | http://orcid.org/0000-0003-3857-1039 | - |
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