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Lanthanum Doping Enabling High Drain Current Modulation in a p-Type Tin Monoxide Thin-Film Transistor

Title
Lanthanum Doping Enabling High Drain Current Modulation in a p-Type Tin Monoxide Thin-Film Transistor
Author
정재경
Keywords
cosputtering; p-type semiconductor; tin monoxide; lanthanum doping; thin-film transistor
Issue Date
2019-12
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v. 11, no. 50, page. 47025-47036
Abstract
Effects of lanthanum (La) loading on the structural, optical, and electrical properties of tin monoxide (SnO) films were examined as a p-type semiconducting layer. La loading up to 1.9 atom % caused the texturing of the tetragonal SnO phase with a preferential orientation of (101), which was accompanied by the smoother surface morphology. Simultaneously, the incorporated La cation suppressed the formation of n-type SnO2 in the La-doped SnO film and widened its optical band gap. These variations allowed the 1.9 atom % La-loaded SnO film to have a high hole mobility and carrier density, compared with the La-free control SnO film. The superior semiconducting property was reflected in the p-type thin-film transistor (TFT). The control SnO TFTs exhibited the field-effect mobility (mu(SAT)) an I-ON/OFF ratio of 0.29 cm(2) V-1 s(-1) and 5.4 x 10(2), respectively. Enhancement in the mu(SAT) value and I-ON/OFF ratio was observed for the TFTs with the 1.9 atom % La-loaded SnO channel layer: they were improved to 1.2 cm(2) V-1 s(-1) and 7.3 x 10(3), respectively. The reason for this superior performance was discussed on the basis of smoother morphology, suppression of disproportionation conversion from Sn2+ to Sn + Sn4+, and reduced gap-state density.
URI
https://pubs.acs.org/doi/10.1021/acsami.9b14462https://repository.hanyang.ac.kr/handle/20.500.11754/157120
ISSN
1944-8244; 1944-8252
DOI
10.1021/acsami.9b14462
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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