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dc.contributor.author심종인-
dc.date.accessioned2020-11-30T00:30:26Z-
dc.date.available2020-11-30T00:30:26Z-
dc.date.issued2003-07-
dc.identifier.citation한국광학회 2003년도 하계학술발표회 논문집, page. 222-223en_US
dc.identifier.urihttps://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE06319559-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/156052-
dc.description.abstract반도체 광증폭기에서의 포화출력 및 잡음특성을 해석하였다.The optical gain characteristics of 1550nm traveling-wave semiconductor optical amplifiers are analyzed experimentally and theoretically. The result shows that there is an optimum active layer thickness for high saturation output power.en_US
dc.language.isoko_KRen_US
dc.publisher한국광학회en_US
dc.title진행파형 반도체 광증폭기에서 이득특성의 활성층 구조 의존성en_US
dc.title.alternativeStructural dependence of an optical gain in a traveling - wave semiconductor optical amplifieren_US
dc.typeArticleen_US
dc.contributor.googleauthor장세윤-
dc.contributor.googleauthor심종인-
dc.contributor.googleauthor이정석-
dc.contributor.googleauthor김호인-
dc.contributor.googleauthor윤인국-
dc.contributor.googleauthor김승우-
dc.contributor.googleauthor신현철-
dc.contributor.googleauthor어영선-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF PHOTONICS AND NANOELECTRONICS-
dc.identifier.pidjishim-


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