ICP-CVD 방법에 의해 성장된 탄소나노튜브의 Ni 및 Co 촉매 두께에 따른 구조적 물성 및 전계방출특성

Abstract

Carbon nanotubes (CNTs) were grown on the TiN-coated silicon substrate with different thickness of Ni and Co catalysts layer at 600ᄋC using inductively coupled plasma-chemical vapor deposition (ICP-CVD). The Ni and Co catalysts were formed using the RF magnetron sputtering system with various deposition times. It was found that the growth of CNTs was strongly influenced by the surface morphology of Ni and Co catalysts. With increasing deposition time, the thickness of catalysts increased and the grain boundary size of catalysts increased. The surface morphology of catalysts and CNTs were elucidated by SEM. The Raman spectrum further confirmed the graphitic structure of the CNTs. The turn-on field of CNTs grown on Ni and Co catalysts was about 2.7V//an and 1.9V//an respectively. Field emission current density of CNTs grown on Ni and Co catalysts was measured as 11.67mA/cm2 at 5.5V//an and J.5mA/cm2 at 5.5V//an respectively.