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ICP-CVD 방법에 의해 성장된 탄소나노튜브의 Ni 및 Co 촉매 두께에 따른 구조적 물성 및 전계방출특성

Title
ICP-CVD 방법에 의해 성장된 탄소나노튜브의 Ni 및 Co 촉매 두께에 따른 구조적 물성 및 전계방출특성
Other Titles
Characterization of structural and field emissive properties of CNTs grown by ICP-CVD method as a function of Ni and Co catalysis thickness
Author
박진석
Issue Date
2003-07
Publisher
대한전기학회
Citation
대한전기학회 학술대회 논문집, v. 2003, no. 7, page. 1574-1576
Abstract
Carbon nanotubes (CNTs) were grown on the TiN-coated silicon substrate with different thickness of Ni and Co catalysts layer at 600ᄋC using inductively coupled plasma-chemical vapor deposition (ICP-CVD). The Ni and Co catalysts were formed using the RF magnetron sputtering system with various deposition times. It was found that the growth of CNTs was strongly influenced by the surface morphology of Ni and Co catalysts. With increasing deposition time, the thickness of catalysts increased and the grain boundary size of catalysts increased. The surface morphology of catalysts and CNTs were elucidated by SEM. The Raman spectrum further confirmed the graphitic structure of the CNTs. The turn-on field of CNTs grown on Ni and Co catalysts was about 2.7V//an and 1.9V//an respectively. Field emission current density of CNTs grown on Ni and Co catalysts was measured as 11.67mA/cm2 at 5.5V//an and J.5mA/cm2 at 5.5V//an respectively.
URI
http://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE01338754https://repository.hanyang.ac.kr/handle/20.500.11754/156038
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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