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Ferromagnetic properties of MoS2 film doped by Fe using chemical vapor deposition

Title
Ferromagnetic properties of MoS2 film doped by Fe using chemical vapor deposition
Author
김은규
Keywords
MoS2; Ferromagnetic semiconductor; Raman; Curie
Issue Date
2020-02
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
SOLID STATE COMMUNICATIONS, v. 306, article no. 113776
Abstract
We have investigated the ferromagnetic properties of MoS2 thin film doped by iron using chemical vapour deposition. The structure of film was determined to be poly-crystalline with various phases. The iron doped MoS2 film shows that the ferromagnetic hysteresis appears at room temperature, and also indicated two Curie temperatures. The remnant magnetization and coercive field at room temperature are 36 emu/cm(3) and 44 Oe. The elemental atomic concentration of iron doped MoS2 measured by x-ray photoelectron spectroscopy was 0.69 at. %.
URI
https://www.sciencedirect.com/science/article/pii/S0038109819302212?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/155317
ISSN
0038-1098; 1879-2766
DOI
10.1016/j.ssc.2019.113776
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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